EUV thin film ellipsometry

M. Yamamoto, K. Mayama, H. Kimura and M. Yanagihara

RISM, Tohoku University, 980-77 Japan

    With multilayer polarizers, EUV(97eV) ellipsometry of thin film sample
has been carried out for the first time as far as we know. The relative
amplitude attenuation Rp/Rs of a Mo single layer sample was measured as a
function of the angle of incidence. Reflectance of s-polarization was also
measured for comparison. Wide variation of phase and amplitude upon
reflection revealed high sensitivity of EUV ellipsometry to the optical
structure of thin films. Results of ellipsometry and reflectometry with
single layer model analysis confirmed that ellipsometry has higher
resolution than reflectometry in respect to the optical structures of the
sample.